data sheet 1 v1.0, 2007-05-25 smart high-side power switch BSP452 ? high-side switch ? short-circuit protection ? input protection ? overtemperature protection with hysteresis ? overload protection ? overvoltage protection ? switching inductive load ? clamp of negative output voltage with inductive loads ? undervoltage shutdown ? maximum current internally limited ? e lectro s tatic d ischarge ( esd ) protection ? reverse battery protection 1 ) package: sot 223 type ordering code bsp 452 q67000-s271 application ? c compatible power switch for 12 v dc grounded loads ? all types of resistive, inductive and capacitive loads ? replaces electromechanical relays and discrete circuits general description n channel vertical power fet with charge pump, ground referenced cmos compatible input,monolithically integrated in smart sipmos ? technology. fully protected by embedded protection functions. blockdiagramm: in 3 r in + v bb signal gnd esd miniprofet out gnd logic voltage sensor voltage source charge pump level shifter temperature sensor rectifier limit for unclamped ind. loads gate protection current limit 2 4 1 load gnd load v logic overvoltage protection esd- diode 1 ) with resistor r gnd =150 ? in gnd connection, resistor in series with in connections reverse load current limited by connected load. sot-223 sot-223 1 pg-sot-223 ? aec qualified ? green product (rohs compliant)
data sheet 2 v1.0, 2007-05-25 smart high-side power switch BSP452 pin symbol function 1 out o output to the load 2 gnd - logic ground 3 in i input, activates the power switch in case of logical high signal 4 vbb + positive power supply voltage maximum ratings at t j = 25 c unless otherwise specified parameter symbol values unit supply voltage v bb 40 v load current self-limited i l i l ( sc ) a maximum input voltage 2 ) v in -5.0... v bb v maximum input current i in 5 ma inductive load switch-off energy dissipation, single pulse i l = 0.5a , t a = 150c (not tested, specified by design) e as 0.5 j load dump protection 3 ) v loaddump = u a + v s r l = 24 ? r i =2 ? , t d =400ms, in= low or high, u a =13,5v r l = 80 ? (not tested, specified by design) v load dump 4 ) 60 80 v electrostatic discharge capability (esd) 5 ) pin 3 pin 1,2,4 v esd 1 2 kv operating temperature range storage temperature range t j t stg -40 ...+150 -55 ...+150 c max. power dissipation (dc) 6 ) t a = 25 c p tot 1.8 w thermal resistance chip - soldering point: chip - ambient: 6) r thjs r thja 7 70 k/w 2 ) at v in > v bb , the input current is not allowed to exceed 5 ma. 3 ) supply voltages higher than v bb(az) require an external current limit for the gnd pin, e.g. with a 150 ? resistor in the gnd connection a resistor for the protection of the input is integrated. 4 ) v load dump is setup without the dut connected to the generator per iso 7637-1 and din 40839 5 ) hbm according to mil-std 883d, methode 3015.7 6 ) bsp 452 on epoxy pcb 40 mm x 40 mm x 1.5 mm with 6 cm 2 copper area for v bb connection
data sheet 3 v1.0, 2007-05-25 smart high-side power switch BSP452 electrical characteristics parameter and conditions symbol values unit at t j = 25 c, v bb = 13.5v unless otherwise specified min typ max load switching capabilities and characteristics on-state resistance (pin 4 to 1) i l = 0.5 a, v in = high t j = 25c t j = 150c r on -- -- 0.16 -- 0.2 0.4 ? nominal load current (pin 4 to 1) 7 ) iso standard: v on = v bb - v out = 0.5 v t s = 85 c i l(iso) 0.7 -- -- a turn-on time to 90% v out turn-off time to 10% v out r l = 24 ? t on t off -- -- 60 60 100 150 s slew rate on 10 to 30% v out , r l = 24 ? d v /dt on -- 2 4 v/ s slew rate off 70 to 40% v out , r l = 24 ? -d v /dt off -- 2 4 v/ s input allowable input voltage range, (pin 3 to 2) v in -3.0 -- v bb v input turn-on threshold voltage t j = -40...+150c v in(t+) -- -- 3.5 v input turn-off threshold voltage t j = -40...+150c v in(t-) 1.5 -- -- v input threshold hysteresis ? v in(t) -- 0.5 -- v off state input current (pin 3) v in(off) = 1.2 v t j = -40...+150c i in(off) 10 -- 60 a on state input current (pin 3) v in(on) = 3.0 v to v bb t j = -40...+150c i in(on) 10 -- 100 a input resistance r in 1.5 2.8 3.5 k ? 7 ) i l(iso) is limited by current limitation, see i l(sc) , next page
data sheet 4 v1.0, 2007-05-25 smart high-side power switch BSP452 parameter and conditions symbol values unit at t j = 25 c, v bb = 13.5v unless otherwise specified min typ max operating parameters operating voltage 8 ) t j =-40...+150c v bb(on) 5.0 -- 34 v undervoltage shutdown t j =-40...+150c v bb(under) 3.5 -- 5 v undervolta g e restart t j =-40...+25c t j =+150c v bb(u rst) -- -- 6.5 7.0 v undervolta g e restart of char g e pumpe see diagram page 7 v bb(ucp) -- 5.6 7 v undervoltage hysteresis ? v bb(under) = v bb(u rst) - v bb(under) ? v bb(under) -- 0.3 -- v overvoltage shutdown t j =-40...+150c v bb(over) 34 -- 42 v overvoltage restart t j =-40...+150c v bb(o rst) 33 -- -- v overvoltage hysteresis t j =-40...+150c ? v bb(over) -- 0.7 -- v standby current (pin 4), v in = low t j =-40...+150c i bb(off) -- 10 25 a operating current (pin 2), v in = 5 v i gnd -- 1 1.6 ma leakage current (pin 1) v in = low t j =-40...+25c t j =150c i l(off) -- 2 5 7 a protection functions current limit (pin 4 to 1) t j = 25c v bb = 20v t j = -40...+150c i l(sc) 0.7 0.7 1.5 -- 2 2.4 a overvoltage protection i bb =4ma t j =-40...+150c v bb(az) 41 -- -- v output clamp (ind. load switch off) at v out = v bb - v on(cl) , i bb = 4ma v on(cl) 41 47 -- v thermal overload trip temperature t jt 150 -- -- c thermal hysteresis ? t jt -- 10 -- k inductive load switch-off energy dissipation 9 ) t j start = 150 c, single pulse, i l = 0.5 a, v bb = 12 v (not tested, specified by design) e as -- -- 0.5 j reverse battery (pin 4 to 2) 10 ) (not tested, specified by design) - v bb -- -- 30 v 8 ) at supply voltage increase up to v bb = 5.6 v typ without charge pump, v out v bb - 2 v 9 ) while demagnetizing load inductance, dissipated energy in profet is e as = v on(cl) * i l (t) dt, approx. e as = 1 / 2 * l * i 2 l * ( v on(cl) v on(cl) - v bb ) 10 ) requires 150 ? resistor in gnd connection. reverse load current (through intrinsic drain-source diode) is normally limited by the connected load. 7
data sheet 5 v1.0, 2007-05-25 smart high-side power switch BSP452 data book 5 200896 max. allowable power dissipation p tot = f (t a ,t sp ) p tot [w] 0 2 4 6 8 10 12 14 16 18 0 25 50 75 100 125 150 t a t sp t a, t sp [c] on state resistance (vbb-pin to out-pin) r on = f (tj); v bb = 13.5 v; i l = 0.5 a r on [ ? ] 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 -50 -25 0 25 50 75 100 125 150 98% t j [c] current limit characteristic i l(sc) = f (v on ); (v on see testcircuit) i l(sc) [a] 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 02468101214 25c 150c -40c v on [v] typ. input current i in = f (v in ); v bb = 13,5 v i in [a] 0 5 10 15 20 25 30 35 40 45 50 02468101214 -40c +150c +25c v in [v]
data sheet 6 v1.0, 2007-05-25 smart high-side power switch BSP452 typ. operating current i gnd = f (t j ); v bb = 13,5 v; v in = high i gnd [ma] 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 -50 -25 0 25 50 75 100 125 150 t j [c] typ. standby current i bb(off) = f (t j ); v bb = 13,5 v; v in = low i bb(off) [a] 0 1 2 3 4 5 6 7 8 -50 -25 0 25 50 75 100 125 150 t j [c] typ. overload current i l(lim) = f (t); v bb = 13,5 v, no heatsink, param.: t jstart i l(lim) [a] 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150 200 250 300 350 400 -40c +150c +25c t [ms] short circuit current i l(sc) = f (t j ); v bb = 13,5 v i l(sc) [a] 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -50 -25 0 25 50 75 100 125 150 t j [c]
data sheet 7 v1.0, 2007-05-25 smart high-side power switch BSP452 typ. input turn on voltage threshold v in(t+) = f (t j ); v in(t+) [v] 0 0.5 1 1.5 2 2.5 3 -50 -25 0 25 50 75 100 125 150 13v t j [c] typ. on-state resistance (vbb-pin to out-pin) r on = f (v bb ,i l) ; i l =0.5a, t j = 25c r on [m ? ] 0 50 100 150 200 250 300 0 5 10 15 20 25 v bb [v] figure 6: undervoltage restart of charge pumpe v on [v] v bb(under) v bb(u rst) v bb(over) v bb(o rst) v bb(u cp) v bb [v] charge pump starts at v bb(ucp) about 7 v typ. test circuit
data sheet 8 v1.0, 2007-05-25 smart high-side power switch BSP452 package outlines figure 1 pg-sot-223 (plastic dual small outlin e package) (rohs-compliant) to meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. green products are rohs-compliant (i.e pb- free finish on leads and suitable for pb-fre e soldering according to ipc/jedec j-std-020). please specify the package needed (e.g. green package) when placing an order ?.1 ?.2 ?.1 0.7 4 3 2 1 6.5 3 acc. to +0.2 din 6784 1.6 ?.1 15?max ?.04 0.28 7 ?.3 ?.2 3.5 0.5 0.1 max min b m 0.25 b a 2.3 4.6 a m 0.25 you can find all of our packages, so rts of packing and others in our infineon internet page ?products?: http://www.infineon.com/products . dimensions in mm
data sheet 9 v1.0, 2007-05-25 smart high-side power switch BSP452 revision history version date changes 1.0 2007-05-25 creation of the green datasheet. first page : adding the green logo and the aec qualified adding the bullet aec qualified and the rohs compliant features package page modification of the package to be green.
edition 2007-05-25 published by infineon technologies ag 81726 munich, germany ? infineon technologies ag 5/29/07. all rights reserved. legal disclaimer the information given in this docu ment shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the app lication of the device, infi neon technologies hereby disclaims any and all warranties a nd liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. information for further information on technology , delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain da ngerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safe ty or effectiveness of that device or system. life support devices or systems are intended to be implanted in the hu man body, or to support an d/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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